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| Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = (Electrically Isolated Back Surface) Single MOSFET Die RDS(on) = 0.39 W trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C Maximum Ratings 1000 1000 20 30 22 96 24 60 3 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~ g ISOPLUS 247TM G D Isolated back surface* G = Gate S = Source * Patent pending D = Drain Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low drain to tab capacitance(<30pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control Advantages * Easy assembly * Space savings * High power density 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 V 5.0 V 100 nA TJ = 25C TJ = 125C 100 mA 2 mA 0.39 W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 24A Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. 98599 (3/99) (c) 2000 IXYS All rights reserved 1-2 IXFR 24N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 2 15 22 7000 VGS = 0 V, VDS = 25 V, f = 1 MHz 750 260 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 24A RG = 1 W (External), 35 75 21 250 VGS = 10 V, VDS = 0.5 * VDSS, ID = 24A 55 135 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 (IXFR) OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 24A Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 24 96 1.5 250 A A V ns mC A IF = IS,-di/dt = 100 A/ms, VR = 100 V 1.0 8 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle d 2 % (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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